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| Ordering number:ENN6355 N-Channel Silicon MOSFET FTS2011 Load Switching Applications Features * Low ON resistance. * 2.5V drive. * Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2011] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 0.125 7 : Source 8 : Drain SANYO : TSSOP8 4.5 Conditions 6.4 Ratings 20 10 8 32 1.3 150 -55 to +150 Unit V V A A W C C Mounted on a ceramic board (1000mm2x0.8mm) Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=4V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.4 15 21 13 18 1950 550 370 17 26 Conditions Ratings min 20 1 10 1.3 typ max Unit V A A V S m m pF pF pF Marking : S2011 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60100TS (KOTO) TA-2115 No.6355-1/4 FTS2011 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A VDS=10V, VGS=10V, ID=8A IS=8A, VGS=0 Ratings min typ 24 400 210 290 60 2.6 10 0.8 1.2 max Unit ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=10V VIN 4V 0V VIN PW=10s D.C.1% ID=8A RL=1.25 D VOUT G P.G 50 FTS2011 S 20 18 16 ID -- VDS 4.0V 2.5V 2.0V VDS=10V Ta=25C Drain Current, ID - A 15 ID -- VGS VDS=10V Drain Current, ID - A 3.0V 3.5V 12 14 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 9 1.5V 6 3 C Ta = 75 25C 0 3.0 0 0.2 0.4 0.6 0.8 1.0 2.5 1.2 --2 1.4 VGS=1.0V Drain-to-Source Voltage, VDS - V IT00436 5 C 1.6 1.8 Gate-to-Source Voltage, VGS - V 30 IT00437 30 RDS(on) -- VGS Ta=25C Static Drain-to-Source On-State Resistance, RDS (on) - m RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS (on) - m 25 25 8A 20 20 ID=2A 15 2A I D= =2.5 , VGS V 15 A, I D=8 =4.0V VGS 10 10 5 5 0 0 2 4 6 8 10 IT00438 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS - V Ambient Temperature, Ta - C IT00439 No.6355-2/4 FTS2011 100 yfs -- ID VDS=10V Forward Transfer Admittance, | yfs | - S 7 5 3 2 100 7 5 3 2 IF -- VSD VGS=0 Forward Current, IF - A 10 7 5 3 2 -Ta= 75 25 C 10 7 5 3 2 1.0 7 5 3 2 C 2 C 5 1.0 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID - A 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16 5 7 100 IT00440 0.1 7 5 3 2 0.01 0.2 Ta= 75 C 0.3 0.4 0.5 0.6 --25 C 0.7 25 C 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD - V 10 IT00441 Ciss, Coss, Crss -- VDS f=1MHz VGS -- Qg VDS=10V ID=8V 9 Gate-to-Source Voltage, VGS - V 18 20 Ciss Coss Crss 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 55 60 Ciss, Coss, Crss - pF Drain-to-Source Voltage, VDS - V 1000 7 5 IT00442 100 7 5 3 2 Total Gate Charge, Qg - nC IT00443 SW Time -- ID td(off) tf tr td(on) VDD=10V VGS=4V ASO IDP=32A ID=8A 10 m <10s Switching Time, SW Time - ns 3 2 100 7 5 3 2 10 7 5 3 2 0.1 0.1 2 3 5 7 1m 10 s 100s Drain Current, ID - A 10 7 5 3 2 1.0 7 5 3 2 s DC 0m s op tio Operation in this n area is limited by RDS(on) era Drain Current, ID - A 1.0 2 3 5 7 10 IT00444 0.1 7 5 Ta=25C 3 Single pulse 2 2 0.01 Mounted on a ceramic board (1000mm x0.8mm) 2 3 5 7 10 2 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain-to-Source Voltage, VDS - V 5 7 100 IT00445 2.0 PD -- Ta Allowable Power Dissipation, PD - W 1.5 1.3 M ou nte d 1.0 on a ce ram ic 0.5 bo ard (10 00 mm 2 x0 .8m m) 100 120 140 160 0 0 20 40 60 80 Ambient Temperature, Ta - C IT00446 No.6355-3/4 FTS2011 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice. PS No.6355-4/4 |
Price & Availability of FTS2011
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